关于用fmsc操作片外nand flash 的大量读写

霉是全方面的

用的128M的nand flash  多页的读写都完成了，但是由于LCD显示图片的时候 ，图片数量有点多，我想先把图片代码存在flash里面，然后切换屏幕的时候 再去读，自己写了个写常量的函数- -不知道为啥感觉总和我的定义的数组读出来的不一样

[mw_shl_code=c,true]WriteReadAddr.Zone = 0x00;   WriteReadAddr.Block = 0x01;   WriteReadAddr.Page = 0x00; [/mw_shl_code] [mw_shl_code=c,true]FSMC_NAND_Writeconst(WriteReadAddr, 75);[/mw_shl_code] [mw_shl_code=c,true]

[mw_shl_code=c,true]uint32_t FSMC_NAND_Writeconst(NAND_ADDRESS Address, uint32_t NumPageToWrite) { uint32_t index = 0x00, numpagewritten = 0x00, addressstatus = NAND_VALID_ADDRESS; uint32_t status = NAND_READY, size = 0x00; while((NumPageToWrite != 0x00) && (addressstatus == NAND_VALID_ADDRESS) && (status == NAND_READY)) { /* Page write command and address */ *(vu8 *)(NAND_FLASH_START_ADDR | CMD_AREA) = NAND_CMD_PAGEPROGRAM; *(vu8 *)(NAND_FLASH_START_ADDR | ADDR_AREA) = 0x00; *(vu8 *)(NAND_FLASH_START_ADDR | ADDR_AREA) = 0X00; *(vu8 *)(NAND_FLASH_START_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS); *(vu8 *)(NAND_FLASH_START_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS); /* Calculate the size */ size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpagewritten); /* Write data */ for(index=NAND_PAGE_SIZE * numpagewritten; index < size; index++) { *(vu8 *)(NAND_FLASH_START_ADDR | DATA_AREA) =index; } *(vu8 *)(NAND_FLASH_START_ADDR | CMD_AREA) = NAND_CMD_PAGEPROGRAM_TRUE; /* 读忙脚 */ // while( GPIO_ReadInputDataBit(GPIOD, GPIO_Pin_6) == 0 ); /* Check status for successful operation */ status = FSMC_NAND_GetStatus(); if(status == NAND_READY) { numpagewritten++; NumPageToWrite--; /* Calculate Next small page Address */ addressstatus = FSMC_NAND_AddressIncrement(&Address); } } return (status | addressstatus); }[/mw_shl_code] [mw_shl_code=c,true]数组能有这么大static uint8_t Rx2 [153600];[/mw_shl_code] [mw_shl_code=c,true]然后用下面读最后一页- -读出来和数组不一样 - -不知道哪里错了[/mw_shl_code] [mw_shl_code=c,true]WriteReadAddr.Zone = 0x00;   WriteReadAddr.Block = 0x00;   WriteReadAddr.Page = 0x4a;   /* Read back the written data */   FSMC_NAND_ReadSmallPage (RxBuffer2, WriteReadAddr, 1);[/mw_shl_code] [mw_shl_code=c,true]uint32_t FSMC_NAND_ReadSmallPage(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToRead) {   uint32_t index = 0x00, numpageread = 0x00, addressstatus = NAND_VALID_ADDRESS;   uint32_t status = NAND_READY, size = 0x00;   while((NumPageToRead != 0x0) && (addressstatus == NAND_VALID_ADDRESS))   {        /* Page Read command and page address */     *(vu8 *)(NAND_FLASH_START_ADDR | CMD_AREA) = NAND_CMD_READ_1;          *(vu8 *)(NAND_FLASH_START_ADDR | ADDR_AREA) = 0x00;      *(vu8 *)(NAND_FLASH_START_ADDR | ADDR_AREA) = 0X00;      *(vu8 *)(NAND_FLASH_START_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);       *(vu8 *)(NAND_FLASH_START_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);            *(vu8 *)(NAND_FLASH_START_ADDR | CMD_AREA) = NAND_CMD_READ_TRUE;          /* 读忙脚 */     //while( GPIO_ReadInputDataBit(GPIOD, GPIO_Pin_6) == 0 );          /* Calculate the size */     size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpageread);      for(index=0; index < 0xff; index++);//延时     /* Get Data into Buffer */         for(index=NAND_PAGE_SIZE * numpageread; index < size; index++)     {       pBuffer[index-2]= *(vu8 *)(NAND_FLASH_START_ADDR | DATA_AREA);     }     numpageread++;          NumPageToRead--;     /* Calculate page address */                 addressstatus = FSMC_NAND_AddressIncrement(&Address);   }   status = FSMC_NAND_GetStatus();      return (status | addressstatus); } [/mw_shl_code]

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霉是全方面的

nand flash 的大批量读写 有人做过吗？难道要参考U盘历程？

正点原子

回复【2楼】霉是全方面的:
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NAND有坏区,你这个有坏区管理么?

simms01

做一个最简单的坏区管理
1. 做一个数组 记录坏区表
2. 扫描整个flash 得到坏块数目
3. 记录坏块表 然后用好的地址替换
4.每次读写擦flash都检查一下表 如果是坏块地址就对地址替换下 
5. 只需扫描一次坏块表 然后表存起来 
6.开机加载坏块表

不知道我买的nand flash是否差 每片进行扫描 都可以找到有 N块 是坏区的 N小于20  最多情况是1-5  呵 后来就做了管理  。
我扫描的坏块表现为   写入一个数 读出来是 0xff  就是不能写入 

霉是全方面的

回复【3楼】正点原子:
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fsmc 里面的ECC效验不行吗？ 难道是我理解错了

霉是全方面的

回复【4楼】simms01:
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但是我对最后一页写1到ff，最后都能读出来1—ff。。。。。。

正点原子

回复【5楼】霉是全方面的:
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这个应该不行,没用过ECC功能.

董董

楼主，能把代码分享一下吗？我也想研究研究nand flash，自己写的初始化函数，运行老是死机。