如何测试STM32的内部FLASH寿命？

q872529868 · 发表于 2017-9-7 13:00:38

如何测试STM32的内部FLASH寿命？单片机型号是：STM32F030F4

我是这样测试的，不停读写FLASH，如果写入和读出不一样就说明FLASH坏了？这样对吗？写入读出超过10W次，依旧没问题，但是数据手册上写着寿命只有1K。
[mw_shl_code=c,true] STMFLASH_Write(0X8003800,&i,1);
STMFLASH_Read(0X8003800,table,1);
printf("%d %d\r\n",i,table[0]);
if(i!=table[0])
{
while(1);
}
i++;[/mw_shl_code]
写入函数
[mw_shl_code=c,true]void STMFLASH_Write(uint32_t WriteAddr,uint16_t *pBuffer,uint16_t NumToWrite)
{
uint32_t secpos;    //扇区地址
uint16_t secoff;    //扇区内偏移地址(16位字计算)
uint16_t secremain; //扇区内剩余地址(16位字计算)
uint16_t i;
uint32_t offaddr; //去掉0X08000000后的地址
if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址
FLASH_Unlock(); //解锁
offaddr=WriteAddr-STM32_FLASH_BASE; //实际偏移地址.
secpos=offaddr/STM_SECTOR_SIZE; //扇区地址  0~127 for STM32F103RBT6
secoff=(offaddr%STM_SECTOR_SIZE)/2; //在扇区内的偏移(2个字节为基本单位.)
secremain=STM_SECTOR_SIZE/2-secoff; //扇区剩余空间大小
if(NumToWrite<=secremain)secremain=NumToWrite;//不大于该扇区范围
while(1)
{
STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整个扇区的内容
for(i=0;i<secremain;i++)//校验数据
{
if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除
}
if(i<secremain)//需要擦除
{
FLASH_ErasePage(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE);//擦除这个扇区
for(i=0;i<secremain;i++)//复制
{
STMFLASH_BUF[i+secoff]=pBuffer;
}
STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//写入整个扇区
}else STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//写已经擦除了的,直接写入扇区剩余区间.
if(NumToWrite==secremain)break;//写入结束了
else//写入未结束
{
secpos++; //扇区地址增1
secoff=0; //偏移位置为0
   pBuffer+=secremain;    //指针偏移
WriteAddr+=secremain; //写地址偏移
   NumToWrite-=secremain; //字节(16位)数递减
if(NumToWrite>(STM_SECTOR_SIZE/2))secremain=STM_SECTOR_SIZE/2;//下一个扇区还是写不完
else secremain=NumToWrite;//下一个扇区可以写完了
}
};
FLASH_Lock();//上锁
}[/mw_shl_code]