求原子哥帮忙分析下 FLASH例程中语句

intelligent

    

[mw_shl_code=c,true]void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite) { u32 secpos; //???????· u16 secoff; //?????????????·(16??×?????) u16 secremain; //?????????à???·(16??×?????) u16 i; u32 offaddr; //????0X08000000?ó?????· if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//·?·¨???· FLASH_Unlock(); //???? offaddr=WriteAddr-STM32_FLASH_BASE; //???????????·. secpos=offaddr/STM_SECTOR_SIZE; //???????· 0~127 for STM32F103RBT6 secoff=(offaddr%STM_SECTOR_SIZE)/2; //??????????????(2??×??????ù±?????.) secremain=STM_SECTOR_SIZE/2-secoff; //???????à?????ó?? if(NumToWrite<=secremain)secremain=NumToWrite;//???ó????????·??§ while(1) { STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//?????????????????? for(i=0;i<secremain;i++)//???é???? { if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//?è?????? } if(i<secremain)//?è?????? { FLASH_ErasePage(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE);//???????????? for(i=0;i<secremain;i++)//???? { STMFLASH_BUF[i+secoff]=pBuffer; } STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//???????????? }else STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//?????­????????,?±?????????????à????. if(NumToWrite==secremain)break;//?????á???? else//???????á?? { secpos++; //???????·??1 secoff=0; //??????????0 pBuffer+=secremain; //???????? WriteAddr+=secremain; //?????·???? NumToWrite-=secremain; //×???(16??)?????? if(NumToWrite>(STM_SECTOR_SIZE/2))secremain=STM_SECTOR_SIZE/2;//???????????????????ê else secremain=NumToWrite;//?????????????????ê?? } }; FLASH_Lock();//???? }[/mw_shl_code]

secoff=(offaddr%STM_SECTOR_SIZE)/2; //??????????????(2??×??????ù±?????.)
secremain=STM_SECTOR_SIZE/2-secoff; //???????à?????ó?? 
 扇区剩余空间如何得到的？ 请高手帮忙分析下，thanks

正点原子

这个问题，你先好好自己想想。
想两天再说。
提示：看STM32的FLASH资料，搞懂一个扇区是多大，然后自己给定一个地址，去列出一个公式出来，看看这个地址属于哪个扇区，偏移量是多少？得出一个通用的公式后，再来看我的代码。

真的好多巧合

刚接触，学习一下。。

intelligent

已经解决 谢谢大家~~