W25M02G不能读写擦除

一号小鱼 · 发表于 2017-12-25 11:01:55

本帖最后由一号小鱼于 2017-12-25 13:22 编辑

我的板子上用STM32F205驱动SPI FLASH W25M02G,现在可以正常读出flash 的ID，但是不能读写擦除，读了一下开机时候的寄存器值，如下图：

3个寄存器值

3个寄存器的解释

硬件上/WP接上拉。
问题1：SR1的Block Protect Bits (BP3, BP2, BP1, BP0, TB) 的这几个位开机就是1是正常的么？
问题2：我将这几个位清0后写入SR1，再回读是正常的0x00,但是进行一次读操作后又恢复到0x7C.这又是什么情况。
问题3：这种情况下，我对flash 进行ERASE,SR3得到的状态值0x04,
360截图20171225105632503.jpg

擦除失败？
问题4：如果是保护状态，按表说明，这个情况下FLASH应该是没有锁定的吧？我理解可有错？
360截图20171225105849105.jpg

大家帮忙看下

一号小鱼 · 发表于 2017-12-25 11:01:56

解决：原来是写FLASH寄存器的函数有问题，更正之后就可以了，[mw_shl_code=c,true]void SPI_NAND_SetSR(uint8_t sreg,UINT8 buftype)
{
/*!< Enable the write access to the FLASH */
sFLASH_WriteEnable();
/*!< Select the FLASH: Chip Select low */
sFLASH_CS_LOW();
/*!< Send "Read Status Register" instruction */
sFLASH_SendByte(sFLASH_CMD_WRSR);
/*!< Send Status Register addr */
sFLASH_SendByte(sreg);
sFLASH_SendByte(buftype);
/*!< Deselect the FLASH: Chip Select high */
sFLASH_CS_HIGH();
}
[/mw_shl_code]
开机初始化完成之后必须把SR1的保护位都清0才可以进行后续操作。

一号小鱼 · 发表于 2017-12-25 13:24:19

有没有人遇到过，请指点下

正点原子 · 发表于 2017-12-26 01:06:13

帮顶，多试试

一号小鱼 · 发表于 2017-12-27 10:43:54

正点原子发表于 2017-12-26 01:06
帮顶，多试试

谢谢，现在貌似是可以擦除了，不会报擦除跟写错误。但是现在写不进去，不报写错误，但是写完之后SR3-WEL没有自动归0，BUSY是清掉了的。 360截图20171227103730501.jpg

[mw_shl_code=c,true]uint32_t SPI_NAND_WriteSmallPage(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToWrite)
{
  uint32_t index = 0x00, numpagewritten = 0x00, addressstatus = NAND_VALID_ADDRESS;
  uint32_t status = NAND_READY, size = 0x00;
uint16_t pageaddr=(Address.Block<<6)|(Address.Page&0x003f);
uint32_t waitwend=0;
SPI_NAND_WaiteProtected();
SPI_NAND_SetProtected();
  while((NumPageToWrite != 0x00) && (addressstatus == NAND_VALID_ADDRESS) && (status == NAND_READY))
  {

/*!< Select the FLASH: Chip Select low */
sFLASH_CS_LOW();
//ÇD»»¿éÇø
if(Address.Zone==0)
{
if(CurFlashDies==1)
{
CurFlashDies=0;
sFLASH_SendByte(sFLASH_CMD_DIES);
sFLASH_SendByte(0x00);
}
}
else if(Address.Zone==1)
{
if(CurFlashDies==0)
{
CurFlashDies=1;
sFLASH_SendByte(sFLASH_CMD_DIES);
sFLASH_SendByte(0x01);
}
}
   /*!< Enable the write access to the FLASH */
sFLASH_WriteEnable();
/*!< Deselect the FLASH: Chip Select high */
sFLASH_CS_HIGH();

Flash_delay(1);
sFLASH_CS_LOW();

/*!< Send "Write to Memory " instruction */
sFLASH_SendByte(sFLASH_CMD_RANDOMPDL);//sFLASH_CMD_PDL
/*!< Send WriteAddr Byte Address or Column Address byte to write to */
sFLASH_SendByte(0x00);
sFLASH_SendByte(0x00);

/*!< while there is data to be written on the FLASH */
/* Calculate the size */
size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpagewritten);

/* Write data (size-NAND_PAGE_SIZE)*/
for(index=(size-NAND_PAGE_SIZE); index < size; index++)
{
/*!< Send the current byte */
sFLASH_SendByte(pBuffer[index]);
}
/*!< Deselect the FLASH: Chip Select high */
sFLASH_CS_HIGH();
/*!< Wait the end of Flash writing */
sFLASH_WaitForWriteEnd();

status=SPI_NAND_GetSR(sFLASH_SR1);
status=SPI_NAND_GetSR(sFLASH_SR3);
SPI_NAND_SetSR(sFLASH_SR1,0x00);

//êy¾Y×°ÔØíê3éoó￡¬D′èëò»ò3
/*!< Select the FLASH: Chip Select low */
sFLASH_CS_LOW();
sFLASH_SendByte(sFLASH_CMD_PEXE);
sFLASH_SendByte(sFLASH_DUMMY_BYTE);//Dummy
/*!< Send WriteAddr medium nibble address byte to write to */
sFLASH_SendByte((pageaddr& 0xFF00) >> 8);
/*!< Send WriteAddr low nibble address byte to write to */
sFLASH_SendByte(pageaddr& 0xFF);

/*!< Deselect the FLASH: Chip Select high */
sFLASH_CS_HIGH();

/*!< Wait the end of Flash writing */
sFLASH_WaitForWriteEnd();
status = SPI_NAND_GetStatus();
while(status==0x02)
{
status = SPI_NAND_GetStatus();
waitwend++;
if(waitwend>0x10000)
{
break;
}
}
status = SPI_NAND_GetStatus();
status=SPI_NAND_GetSR(sFLASH_SR1);
status=SPI_NAND_GetSR(sFLASH_SR3);
if(status==0x02)
{
SPI_NAND_SetSR(sFLASH_SR1,0x00);

//êy¾Y×°ÔØíê3éoó￡¬D′èëò»ò3
/*!< Select the FLASH: Chip Select low */
sFLASH_CS_LOW();
sFLASH_SendByte(sFLASH_CMD_PEXE);
sFLASH_SendByte(sFLASH_DUMMY_BYTE);//Dummy
/*!< Send WriteAddr medium nibble address byte to write to */
sFLASH_SendByte((pageaddr& 0xFF00) >> 8);
/*!< Send WriteAddr low nibble address byte to write to */
sFLASH_SendByte(pageaddr& 0xFF);

/*!< Deselect the FLASH: Chip Select high */
sFLASH_CS_HIGH();

/*!< Wait the end of Flash writing */
sFLASH_WaitForWriteEnd();
status = SPI_NAND_GetStatus();
while(status==0x02)
{
status = SPI_NAND_GetStatus();
waitwend++;
if(waitwend>0x10000)
{
break;
}
}
}

if(status == NAND_READY)
{
   numpagewritten++;

   NumPageToWrite--;

   /* Calculate Next small page Address */
   addressstatus = SPI_NAND_AddressIncrement(&Address);
}
else
{
break;
}

}
SPI_NAND_ClearProtected();
  return (status );
}
[/mw_shl_code]按手册上说明发送完这个之后应该是要自动清掉WEL，现在没清掉是说明没执行10h命令？

1021256354 · 发表于 2019-2-24 22:40:26

LZ：后来02G的读写怎么处理的，有demo么，方便分享一下么？

伴伊云端共舞 · 发表于 2019-6-21 14:43:47

求教楼主The JEDEC assigned Manufacturer ID byte for Winbond (EFh) and two Device ID bytes are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in Figure 6读取nandflash 制造商id时8个时钟周期你是写入一个0x00？